A novel method to evaluate plasma deposited silicon oxide barrier films by water contact angle measurement under DC voltage application (for conference publications from ACCS 2011)

摘要

In this study, organic silicon thin film was deposited on a comb type electrode substrate surface using hexamethyldisilazane (HMDSZ) plasma deposition technique to enhance voltage withstanding capability. The wettability, morphology and capability to withstand voltage were investigated by water contact angle (WCA) measurement, SEM observations, AFM and ampere meter analysis, respectively. The WCA of the substrate is 92.3° after the plasma deposition. As voltage is applied to the electrode, the WCA lowers to 76.4° and the resulting current flow is 0.078 mA. If the voltage is continually applied to the device, the organic silicon film on the substrate starts to peel off, accompanied with a sharp increase in current, which is an irreversible phenomenon. From the SEM and AFM analysis, the voltage withstanding capability of the device can be enhanced by prolonging the plasma processing time in order to obtain thicker thin film.