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Effective field theory of a topological insulator and the Foldy-Wouthuysen transformation

机译:拓扑绝缘体的有效场理论和Foldy-Wouthuysen变换

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Employing the Foldy-Wouthuysen transformation, it is demonstrated straightforwardly that the first and second Chern numbers are equal to the coefficients of the 2+1 and 4+1 dimensional Chern-Simons actions which are generated by the massive Dirac fermions coupled to the Abelian gauge fields. A topological insulator model in 2+1 dimensions is discussed and by means of a dimensional reduction approach the 1+1 dimensional descendant of the 2+1 dimensional Chern-Simons theory is presented. Field strength of the Berry gauge field corresponding to the 4+1 dimensional Dirac theory is explicitly derived through the Foldy-Wouthuysen transformation. Acquainted with it, the second Chern numbers are calculated for specific choices of the integration domain. A method is proposed to obtain 3+1 and 2+1 dimensional descendants of the effective field theory of the 4+1 dimensional time reversal invariant topological insulator theory. Inspired by the spin Hall effect in graphene, a hypothetical model of the time reversal invariant spin Hall insulator in 3+1 dimensions is proposed.
机译:利用Foldy-Wouthuysen变换,可以直接证明第一和第二Chern数等于2 + 1和4 + 1维Chern-Simons动作的系数,这是由与Dibel耦合到阿贝尔测距仪产生的大狄拉克费米子产生的领域。讨论了2 + 1维拓扑绝缘体模型,并通过降维方法提出了2 + 1维Chern-Simons理论的1 + 1维后代。通过Foldy-Wouthuysen变换,明确推导了与4 + 1维Dirac理论相对应的Berry规范场的场强。对此,第二切恩数是针对积分域的特定选择而计算的。提出了一种获取4 + 1维时间逆不变拓扑绝缘子理论的有效场论的3 + 1和2 + 1维后代的方法。受石墨烯自旋霍尔效应的启发,提出了3 + 1维时变不变自旋霍尔绝缘子的假设模型。

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