Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters

摘要

We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photo-diodes as single-photon detectors for 1.3- and 1.55-μm wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10↑(-4), detection efficiencies of 16% for 1.3 μm and 7% for 1.55 μm are obtained. Finally, a timing resolution of less than 200 ps is demonstrated. # 1998 Optical Society of America OCIS codes: 030.0030, 270.5570, 230.5170, 030.5260.