Semiconductor line source for low-coherence interferometry

摘要

The suitability for low-coherence interferometry of a high-power, semiconductor laser line source operated at a forward bias current below threshold is demonstrated. Measurements of the important characteristics of the source are presented. For example, the source produces an output power of 1.3 mW and a spatially uniform coherence length of 16 μm at a bias current of 86% of threshold (250 mA) at 20℃. The usefulness of the source is verified by measurement of the line profile of a contact lens.