Sub-10 nm tunneling field-effect transistors based on monolayer group IV mono-chalcogenides

摘要

The development of air-stable channels with a high on-state current (I-on) is in high demand for the feasible application of TFETs. Monolayer group IV mono-chalcogenides (i.e., GeS, GeSe, SnS, and SnSe), as emerging air-stable atomic-thin semiconductors, are potential channels for sub-10 nm tunneling field-effect transistors due to their high carrier mobility and anisotropic electronic properties. Herein, we investigated the performances of sub-10 nm monolayer (ML) group IV mono-chalcogenide TFETs using ab initio quantum transport simulation. The ML GeSe TFET exhibited the best performance with regards to both high I-on and low leakage current (I-leak) among the four devices, followed by the ML SnSe TFET with a high I-on. The I-on of the optimal ML GeSe TFET with a physical gate length of L-g = 10 nm surpasses the International Technology Roadmap for Semiconductors (ITRS, 2013 Edition) requirements for high-performance (HP) and low-power (LP) devices, simultaneously, and that of the ML SnSe TFET with L-g = 10 nm surpasses the requirement of ITRS HP devices. In combination with our former works, we suggest an E-g of 0.77-1.19 eV and of 0.11-0.15m(0) to search for competitive 2D channels with a high I-on for HP application in TFET devices with a planar homogeneous p-i-n architecture.