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In situ preparation of a CsPbBr3/black phosphorus heterostructure with an optimized interface and photodetector application

机译:原位制备CsPbBr3 /黑磷异质结构界面和优化光电探测器的应用程序

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摘要

Zero-dimensional (0D)-2D nanostructures, which combine the efficient light-harvesting properties of 0D nanocrystals (NCs) and the ultrafast carrier transfer of 2D materials, have been widely used in optoelectronic devices. Although the most common way to fabricate 0D-2D nanostructures consists of a mixing process, the limited loading efficiency of NCs and the poor 0D-2D interface hinder the efficient photo-carrier generation and fast carrier separation/transfer in such systems. Herein, the in situ synthesis of CsPbBr3/BP heterostructures via a hot-injection method was presented, revealing that both the formation process of CsPbBr3 NCs and the CsPbBr3/black phosphorous (BP) interfaces presented pronounced changes. This led to a larger CsPbBr3 NC size, higher CsPbBr3 NC loading efficiency, optimized combination of CsPbBr3 and BP at the interface, and enhanced carrier transfer properties. In addition, the in situ synthesized CsPbBr3/BP heterostructure was used as a photoactive material for the fabrication of photodetectors, which showed high detectivity (D*) of 2.6 x 10(11) Jones. This work highlights a novel strategy to optimize the 0D-2D heterostructure interface and to promote its carrier transfer efficiency, broadening the field of the applications of mixed-dimensional nanostructures.
机译:零维(0 d)二维纳米结构,结合高效聚光特性0 d纳米晶体(nc)和超快的载波传输的二维材料,广泛用于光电设备。最常见的方法制造0 d-2d纳米结构包括一个混合的过程,有限的nc的装载效率和穷人0 d-2d界面阻碍有效photo-carrier生成和快速的载体在这样的系统分离/转让。原位合成CsPbBr3 / BP异质结构通过hot-injection方法提出了,显示的形成过程CsPbBr3 nc和CsPbBr3 /黑磷(BP)接口呈现明显的变化。这导致了一个更大的CsPbBr3数控大小,更高CsPbBr3数控装载效率,优化结合CsPbBr3和BP的接口,和增强载体转移属性。,原位合成CsPbBr3 / BP异质结构被用作光敏材料制造的光电探测器,显示高探测能力(D *) x 2.610(11)琼斯。策略优化0 d-2d异质结构接口和促进其载波传输效率,拓宽的领域mixed-dimensional纳米结构的应用程序。

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