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van der Waals epitaxial two-dimensional CdSxSe(1-x) semiconductor alloys with tunable-composition and application to flexible optoelectronics

机译:范德瓦耳斯外延二维的CdSxSe (1 - x)半导体合金tunable-composition和灵活的应用程序光电子学

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摘要

Despite the substantial progress in the development of two-dimensional (2D) materials from conventional layered crystals, it still remains particularly challenging to produce high-quality 2D non-layered semiconductor alloys which may bring in some unique properties and new functions. In this work, the synthesis of well-oriented 2D non-layered CdSxSe(1-x) semiconductor alloy flakes with tunable compositions and optical properties is established. Structural analysis reveals that the 2D non-layered alloys follow an incommensurate van der Waals epitaxial growth pattern. Photoluminescence measurements show that the 2D alloys have composition-dependent direct bandgaps with the emission peak varying from 1.8 eV to 2.3 eV, coinciding well with the density functional theory calculations. Furthermore, photodetectors based on the CdSxSe(1-x) flakes exhibit a high photoresponsivity of 703 A W-1 with an external quantum efficiency of 1.94 x 10(3) and a response time of 39 ms. Flexible devices fabricated on a thin mica substrate display good mechanical stability upon repeated bending. This work suggests a facile and general method to produce high-quality 2D non-layered semiconductor alloys for next-generation optoelectronic devices.
机译:尽管的实质性进展二维(2 d)材料的发展与传统的层状晶体,它仍然生产仍然是特别具有挑战性高质量的2 d non-layered半导体合金这可能会带来一些独特的属性和新的吗功能。以2 d non-layered CdSxSe (1 - x)用可调半导体合金片成分和光学性质建立。2 d non-layered合金跟随一个不相称的范德瓦耳斯外延生长模式。光致发光测量表明,2 d合金composition-dependent直接带隙发射峰的变化从1.8 2.3 eV电动汽车,同时密度泛函理论计算。基于CdSxSe (1 - x)片表现出高703年photoresponsivity w1和外部量子效率为1.94 x 10(3)和一个响应39毫秒的时间。薄云母衬底显示良好的机械稳定重复弯曲。提出了一个简单和通用方法生产高质量的2 d non-layered半导体合金为新一代光电设备。

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