Phonon transport in the nano-system of Si and SiGe films with Ge nanodots and approach to ultralow thermal conductivity

摘要

Phonon transport in the nano-system has been studied using well-designed nanostructured materials to observe and control the interesting phonon behaviors like ballistic phonon transport. Recently, we observed drastic thermal conductivity reduction in the films containing well-controlled nanodots. Here, we investigate whether this comes from the interference effect in ballistic phonon transport by comparing the thermal properties of the Si or Si0.75Ge0.25 films containing Ge nanodots. The experimentally-obtained thermal resistance of the nanodot layer shows peculiar nanodot size dependence in the Si films and a constant value in the SiGe films. From the phonon simulation results, interestingly, it is clearly found that in the nanostructured Si film, phonons travel in a non-diffusive way (ballistic phonon transport). On the other hand, in the nanostructured SiGe film, although simple diffusive phonon transport occurs, extremely-low thermal conductivity (similar to 0.81 W m(-1) K-1) close to that of amorphous Si0.7Ge0.3 (similar to 0.7 W m(-1) K-1) is achieved due to the combination of the alloy phonon scattering and Ge nanodot scattering.