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机译:高性能5.1 nm平面Janus WSeTe肖特基势垒场效应晶体管
Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China;
Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Hunan Prov Key Lab Flexible Elect Mat Genome Engn, Changsha 410114, Peoples R China;
off current; International Technology Roadmap for Semiconductors; Band gapBALLISTIC PROPERTIESFermi levelSatisfactionSchottky barriersCurrent RequirementField effect transistorsChannel Effect;