Revealing the origin of dislocations in Pb1-xSb2x/3Se (0  x = 0.07)

Nan Pengfei; Chang Yunjie; Chen ZhiweiPei YanzhongZhang YongshengWang YumeiGe Binghui

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Revealing the origin of dislocations in Pb1-xSb2x/3Se (0 x = 0.07)

机译：揭示混乱的起源Pb1-xSb2x / 3 se (0 x = 0.07)

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Defect engineering is an effective route to improve the performance of thermoelectric materials, including Sb doped PbSe, but the formation mechanism of defects remains unclear. In the thermoelectric material Pb1-xSb2x/3Se (0

机译：缺陷工程是一种有效的途径提高热电性能的材料,包括某人掺杂硒化铅,但缺陷的形成机理尚不清楚。在热电材料Pb1-xSb2x / 3 se (0< x < = 0.07),大量的混乱据报道,他们提高中频声子散射,从而改善thezTvalue。微观结构混乱的起源仍然存在不清楚。分辨率扫描透射电子显微镜和密度泛函理论,我们成功地揭示了微观结构Pb1-xSb2x / 3 se (x = 0 - 0.07)深入形成机制的理解混乱。纳米结构在硒化铅矩阵岩盐(RS)结构和理论从点计算证实其可行性的观点形成的能量。位错芯结构确定Sb-doped材料,因此,讨论了形成机制的混乱硒化铅系统。了解结构有着重要的指导意义进化与RS结构化合物,特别是在高性能铅硫族化物热电材料。

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来源
《Nanoscale》 |2020年第37期|19165-19169|共5页
作者
Nan Pengfei; Chang Yunjie; Chen ZhiweiPei YanzhongZhang YongshengWang YumeiGe Binghui;
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作者单位

Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China;

Tongji Univ, Sch Mat Sci & Engn, Interdisciplinary Mat Res Ctr, 4800 Caoan Rd, Shanghai 201804, Peoples R China;

Anhui Univ, Inst Phys Sci & Informat Technol, Minist Educ, Key Lab Struct & Funct Regulat Hybrid Mat, Hefei 230601, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China;

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正文语种英语
中图分类 Online;
关键词
energy of formation; lead selenides; thermoelectric materialsdislocation core;

机译：能量的生成;铅硒化物;热电materialsdislocation核心;

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Revealing the origin of dislocations in Pb1-xSb2x/3Se (0 x = 0.07)

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