Enhanced conductivity and gating effect of p-type Li-doped NiO nanowires

摘要

Li doped NiO nanowires with a diameter smaller than 100 nm were synthesized by electrospinning. The nanowires exhibit p-type characteristics with improved electrical conductivity, through Li doping. Moreover, an enhanced gating effect was obtained in Li-NiO-nano-wire-based field effect transistors (FETs), which hold great potential in transparent optoelectronics.