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3D ordered nanostructures fabricated by nanosphere lithography using an organometallic etch mask

机译:三维有序纳米结构nanosphere臆造出来的使用有机金属蚀刻掩模光刻技术

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A new approach for fabricating porous structures on silicon substrates and on polymer surfaces, using colloidal particle arrays with a polymer mask of a highly etch-resistant organometallic polymer, is demonstrated. Monolayers of silica particles, with diameters of 60 nm, 150 nm, 300 nm, or 500 nm, were deposited either on a silicon substrate or on a surface coated with polyethersulfone (PES), and the voids of the arrays were filled with poly(ferrocenylmethylphenylsilane) (PFMPS). Argon ion sputtering removed the excess PFMPS on the particles which enabled removal of the particles with HF. Further pattern transfer steps with reactive ion etching for different time intervals provided structures in silicon or in a PES layer. Free-standing PES membranes exhibiting regular arrays of circular holes with high porosity were fabricated by using cellulose acetate as a sacrificial layer. The pores obtained on silicon substrates after etching were used as molds for nanoimprint lithography (NIL). A combination of the techniques of nanosphere lithography (NSL) and NIL has resulted in 3D nanostructures with a hemispherical shape (inherited from the nanoparticles) which was obtained both in silicon and in PMMA.
机译:一种新方法用于制造多孔结构在硅基板和聚合物表面,使用聚合物胶体粒子阵列高度抗腐蚀的面具有机金属聚合物,是证明。颗粒,直径60 nm, 150海里,300年海里,或500海里,沉积在硅底物或在一个表面上涂上polyethersulfone (PES),空洞的数组里满是poly (ferrocenylmethylphenylsilane) (PFMPS)。离子溅射的过剩PFMPS删除粒子使颗粒的去除高频。反应离子刻蚀不同的时间间隔提供结构硅或PES层。独立的PES膜表现出规则圆孔阵列具有高孔隙度用醋酸纤维素作为臆造出来的牺牲层。基片蚀刻后用作模具nanoimprint光刻(零)。nanosphere光刻技术(NSL)和零导致三维纳米结构半球形形状(继承了纳米粒子),获得了在硅在PMMA。

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