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Realization of Visible Light Photocatalysis by Wide Band Gap Pure SnO2 and Study of In2O3 Sensitization Porous SnO2 Photolysis Catalyst

机译:通过宽带隙纯SNO2和In2O3敏化多孔SNO2光解催化剂的研究实现可见光光催化

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摘要

SnO2 is a wide band gap semiconductor which has no photocatalysis under visible light. In this study, the disordered porous SnO2 precursor was constructed which showed obvious photocatalysis under visible light irradiation. Its degradation rate to RhB was 51.66% after 100 min, and the amount of hydrogen produced could reach 11.13 mmol·g
机译:SNO2是一个宽带隙半导体,在可见光下没有光催化。 在这项研究中,构建了无序的多孔SNO2前体,该前体在可见光照射下显示出明显的光催化。 100分钟后,其降解速率为51.66%,产生的氢量可能达到11.13 mmol·g。

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