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机译:层厚度影响质子梁对MOS2场效应晶体管的辐照效应
Chinese Acad Sci Inst Microelect High Frequency High Voltage Device &
Integrated C Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect High Frequency High Voltage Device &
Integrated C Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect High Frequency High Voltage Device &
Integrated C Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect High Frequency High Voltage Device &
Integrated C Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect High Frequency High Voltage Device &
Integrated C Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect High Frequency High Voltage Device &
Integrated C Beijing 100029 Peoples R China;
molybdenum disulfide (MoS2); field effect transistors; proton beam irradiation; electronic transport properties; Raman spectra;
机译:电子束辐射和硫醇分子处理对MOS2场效应晶体管性能的影响
机译:电子照射对几层MOS2场效应晶体管的运输和场发射特性的影响
机译:电子束辐射后MOS2场效应晶体管电特性的时间演变
机译:中子和质子辐射:对半绝缘GaAs肖特基二极管中的有源层宽度和电场分布的影响
机译:低能电子束辐照对分离门测试结构上石墨烯和石墨烯场效应晶体管的影响以及石墨烯的拉曼计量。
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:电子照射对几层MOS2场效应晶体管的运输和场发射特性的影响
机译:mOs结功率场效应晶体管和集成电路中的质子辐照效应