Bi2O2Se-Based Memristor-Aided Logic

摘要

The implementation of two-dimensional materials into memristor architectures has recently been a new research focus by taking advantage of their atomic thickness, unique lattice, and physical and electronic properties. Among the van der Waals family, Bi_(2)O_(2)Se is an emerging ternary two-dimensional layered material with ambient stability, suitable band structure, and high conductivity that exhibits high potential for use in electronic applications. In this work, we propose and experimentally demonstrate a Bi_(2)O_(2)Se-based memristor-aided logic. By carefully tuning the electric field polarity of Bi_(2)O_(2)Se through a Pd contact, a reconfigurable NAND gate with zero static power consumption is realized. To provide more knowledge on NAND operation, a kinetic Monte Carlo simulation is carried out. Because the NAND gate is a universal logic gate, cascading additional NAND gates can exhibit versatile logic functions. Therefore, the proposed Bi_(2)O_(2)Se-based MAGIC can be a promising building block for developing next-generation in-memory logic computers with multiple functions.