首页> 外文期刊>ACS nano >High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy
【24h】

High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy

机译:高性能柔性可见盲紫外光紫外光探测器,基于非传统释放策略,具有二维电子气体

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs have been built on rigid substrates, thus limiting the use of 2DEG-IPDs in flexible and wearable applications. In this paper, we have demonstrated high performance flexible AlGaN/GaN 2DEG-IPDs using AlGaN/GaN 2DEG heterostructure membranes created from 8 in. AlGaN/GaN on insulator (AlGaN/GaNOI) substrates. The interdigitated AlGaN/GaN heterostructure has been engineered to reduce dark current by disconnecting the conductive channel at the heterostructure interface. Photocurrent has been also boosted by the escaped carriers from the 2DEG layer. Therefore, the utilization of a 2DEG layer in transferrable AlGaN/GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.
机译:基于AlGaN/GaN界面二维电子气(2DEG)的交指型光电探测器(IPD)因其优异的光电性能而成为高灵敏度紫外(UV)PDs的重要组成部分。然而,大多数2DEG IPD都是在刚性基板上制造的,因此限制了2DEG IPD在柔性和可穿戴应用中的使用。在本文中,我们利用8英寸的AlGaN/GaN 2DEG异质结构膜展示了高性能柔性AlGaN/GaN 2DEG IPD。绝缘体(AlGaN/GaNOI)衬底上的AlGaN/GaN。叉指型AlGaN/GaN异质结构通过断开异质结构界面上的导电沟道来降低暗电流。从2DEG层逃逸的载流子也提高了光电流。因此,在可转移AlGaN/GaN异质结构膜中利用2DEG层为先进的紫外线检测系统提供了高性能柔性2DEG IPD,这在无数生物医学和环境应用中至关重要。

著录项

  • 来源
    《ACS nano》 |2021年第5期|共11页
  • 作者单位

    Nanyang Technol Univ Sch Elect &

    Elect Engn Singapore 639798 Singapore;

    Univ Buffalo State Univ New York Dept Mat Design &

    Innovat Buffalo NY 14260 USA;

    Univ Buffalo State Univ New York Dept Mat Design &

    Innovat Buffalo NY 14260 USA;

    Univ Buffalo State Univ New York Dept Mat Design &

    Innovat Buffalo NY 14260 USA;

    Singapore MIT Alliance Res &

    Technol SMART Low Energy Elect Syst LEES Singapore 138602 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Elect &

    Elect Engn Singapore 639798 Singapore;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 分子物理学、原子物理学;
  • 关键词

    ultraviolet; flexible photodetectors; AlGaN/GaN; piezoelectric; XOI;

    机译:紫外线柔性光电探测器;AlGaN/GaN;压电;XOI;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号