A self-powered, visible-blind ultraviolet photodetector based on n-Ga:ZnO nanorods/ p-GaN heterojunction

摘要

Highlights?An n-Ga:ZnO nanorods/p-GaN heterojunction for UV photodetector was first reported.?The device with Ga:ZnO nanorods showed more than 3.2×105 of the Iph/Idark ratio at zero biases and its responsivity reached to 0.23 A/W.?The reason for better photoelectric response performance of n-GZO NRs/p-GaN was explored.AbstractA self-powered visible-blind ultraviolet (UV) photodetector based onn-Ga:ZnO nanorods (GZO NRs)/p-GaN heterojunction was reported, in which then-type GZO NRs were prepared by the water bath method. In this study, we foundn-GZO NRs/p-GaN heterojunction devices showed better performance than those ofn-ZnO NRs/p-GaN heterojunction devices in terms of the ratio Iph/Idark, responsivity and detectivity. Under UV illumination with