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Design, synthesis, microstructure and electrical properties of thermal-strained PZT films

机译:热应变PZT薄膜的设计,合成,微观结构和电性能

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摘要

The integration units with functional and structural material components have been developed largely recently. In the present study, 200 nm-thick polycrystalline PbZr0.52Ti0.48O3 (PZT) films with a dense columnar structure were grown on LaNiO3 (LNO) buffered heat-resistant steel substrates via a low-cost chemical solution approach. The behavior of the functional PZT films when combined with the structural steel was investigated mainly by TEM and electrical measurement. A large in-plane compressive stress was obtained in the PZT films due to the thermal expansion mismatch of about 88.2 % between the thin films and the steel substrates, which intensifies the orientation of the films toward c-axis. Sub-10 nm 90 degrees nanodomains were alternately distributed in [001] grains which is beneficial to the piezoelectric performance, and the equivalent d(33) value is similar to 44.4 pm V-1. A remnant polarization (P-r) of similar to 67.3 mu C/cm(2) and a dielectric constant of similar to 425 were obtained. The enhanced electrical properties are associated with the stress-induced improved c-axis spontaneous polarization and crystal orientation in the hybrid system. This work may provide a theoretical basis for further integrating functional elements into metallic materials, which is valuable for covering the gap between academic research and industrial mass production.
机译:带有功能和结构材料组件的集成单元在最近得到了很大发展。在本研究中,200纳米厚的多晶PbZr0。52Ti0。采用低成本的化学溶液法在LaNiO3(LNO)缓冲耐热钢衬底上生长了致密柱状结构的48O3(PZT)薄膜。主要通过TEM和电学测量研究了功能PZT薄膜与结构钢结合时的行为。由于PZT薄膜与钢衬底之间约88.2%的热膨胀失配,PZT薄膜中获得了较大的面内压应力,这加剧了薄膜向c轴的取向。亚10nm 90度纳米畴交替分布在[001]晶粒中,这有利于压电性能,等效d(33)值与44.4pm V-1相似。得到了近似于67.3μC/cm(2)的剩余极化(P-r)和近似于425的介电常数。电性能的增强与应力诱导的c轴自发极化和混合系统中晶体取向的改善有关。这项工作可能为进一步将功能元素整合到金属材料中提供理论基础,这对于弥补学术研究与工业大规模生产之间的差距具有重要价值。

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