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Electrical and mechanical properties of pressureless sintered SiC-Ti2CN composites

机译:无压烧结SiC-Ti2Cn复合材料的电气和力学性能

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摘要

Highly conductive SiC-Ti2CN composites were fabricated from beta-SiC and TiN powders with 10 vol% Y2O3-AlN additives via pressureless sintering. The effect of initial TiN content on the microstructure, and electrical and mechanical properties of the SiC-Ti2CN composites was investigated. It was found that all specimens could be sintered to = 98% of the theoretical density. The electrical resistivity of the SiC-Ti2CN composites decreased with increasing initial TiN content. The SiC-Ti2CN composites prepared from 25 vol% TiN showed the highest electrical conductivity (similar to 1163(Omega cm)(-1)) for any pressureless sintered SiC ceramics thus far. The high electrical conductivity of the composites was attributed to the in situ-synthesis of an electrically conductive Ti2CN phase and the growth of N-doped SiC grains during pressureless sintering. The flexural strength, fracture toughness, and Vickers hardness of the composite fabricated with 25 vol% TiN were 430 MPa, 4.9 MPa m(1/2), and 23.1 GPa, respectively, at room temperature.
机译:以β-SiC和TiN粉末为原料,加入体积分数为10%的Y2O3-AlN添加剂,通过无压烧结制备了高导电性SiC-Ti2CN复合材料。研究了初始锡含量对SiC-Ti2CN复合材料微观结构、电学和力学性能的影响。结果发现,所有试样都可以烧结到;=理论密度的98%。SiC-Ti2CN复合材料的电阻率随着初始TiN含量的增加而降低。对于迄今为止的任何无压烧结SiC陶瓷而言,由25 vol%TiN制备的SiC-Ti2CN复合材料显示出最高的导电性(类似于1163(ω-cm)-1)。复合材料的高导电性归因于原位合成导电Ti2CN相和无压烧结过程中掺杂N的SiC晶粒的生长。在室温下,含25 vol%TiN的复合材料的弯曲强度、断裂韧性和维氏硬度分别为430mpa、4.9mpa m(1/2)和23.1gpa。

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