Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 degrees C) temperatures

摘要

Pulsed radiative characteristics of high-power semiconductor lasers based on an asymmetric InGaAs/AlGaAs/Ga As heterostructure with an active region including two quantum wells and a gradient waveguide on the side of the p-emitter are studied. It is shown that the use of the proposed design allows efficient laser operation under pumping by 100-ns current pulses in the temperature range 25-90 degrees C. The lasers with a Fabry-Perot cavity 2900 mu m long demonstrated peak powers of 62 W (injection current 123 A) and 43 W. (122 A) at temperatures of 25 and 90 degrees C, respectively. It is found that at room temperature and currents of similar to 50A, a decrease in the cavity length to 600 mu m does not cause a decrease in the output power with respect to the power of lasers with a long (2900 mu m) cavity. An increase in temperature to 90 degrees C at high injection currents leads to a sharp decrease in the radiative efficiency of lasers with a short (600 mu m) cavity and to the change of their operation regime to the two-band lasing.