Low-energy electron interactions with chlorotrimethylsilane (Si(CH3)(3)Cl), dichlorodimethylsilane (Si(CH3)(2)Cl-2) and chloromethyldimethylsilane (SiH(CH3)(2)(CH2Cl))

摘要

Rationale Silane derivatives are widely used in industrial plasmas for manufacturing lighting devices, solar cells, displays, etc. Models of technological plasmas require quantitative data. The rate coefficients (k) and the activation energies (E-a) of thermal electron attachment for chlorotrimethylsilane (Si(CH3)(3)Cl), dichlorodimethylsilane (Si(CH3)(2)Cl-2) and chloromethyldimethylsilane (SiH(CH3)(2)(CH2Cl)) are reported. This is important for understanding the basic processes occurring in plasmas.