Angular and temperature-related specific features of averaging of hole effective masses in p-Ge at low temperatures

摘要

Microwave magnetoresistance of lightly doped (nondegenerate) p-Ge has been studied by the electron spin resonance method, which can record the derivative of the microwave absorption with respect to the magnetic field. The change in the absorption is proportional to that in the conductivity of the semiconductor in the magnetic field (magnetoresistance). It was found that the averaging time of the light and heavy holes effective masses depends on temperature and on the magnetic field direction in a sample. An analysis of the derivative made it possible to determine regions of the fastest effective mass averaging.