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Low-temperature microwave magnetoresistance in p-Ge and the problem of averaging of the effective masses of light and heavy holes

机译：P-GE的低温微波磁阻以及有效质量的光和重孔的平均问题

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A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek; S. I. Goloshchapov; Marília Caldas; Nelson Studart;
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1. Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes [J] . Veinger A.I., Zabrodskii A.G., Tisnek T.V., Semiconductors . 2011,第10期

机译：由于存在轻空穴和重空穴，轻掺杂p-Ge的低温微波磁阻各向异性的特定特征
2. Angular and temperature-related specific features of averaging of hole effective masses in p-Ge at low temperatures [J] . Tisnek T, Veinger A, Zabrodskii A, Annalen der Physik . 2009,第12期

机译：低温下p-Ge中空穴有效质量平均的角度和温度相关特定特征
3. Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1-xSix [J] . Veinger AI, Zabrodskii AG, Tisnek TV Semiconductors . 2005,第10期

机译：轻掺杂p-Ge和p-Ge1-xSix的低温微波磁阻
4. Low-temperature microwave magnetoresistance in p-Ge and the problem of averaging of the effective masses of light and heavy holes [C] . A.I.Veinger, A.G.Zabrodskii, T.V.Tisnek, International Conference on the Physics of Semiconductors . 2009

机译：P-GE的低温微波磁阻以及有效质量的光和重孔的平均问题
5. Heavy and light chain pairing of bivalent quadroma and knobs-into-holes antibodies analyzed by UHR-ESI-QTOF mass spectrometry [O] . Wolfgang Schaefer, Hans R Völger, Stefan Lorenz, 2016

机译：通过UHR-ESI-QTOF质谱分析的二价四重体和旋钮入孔抗体的重链和轻链配对
6. Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments [O] . D. V. Savchenko 2018

机译：电子和空穴有效质量在重硼掺杂硅纳米结构使用回旋共振实验确定
7. Negative Magnetoresistance and Hole-Hole Interaction in Multilayer Heterostructures p-Ge/Ge1-xSix. [R] . Arapov, Y. G., Kuznetsov, O. A., Neverov, V. N., 1998

机译：多层异质结构中的负磁阻和孔 - 孔相互作用p-Ge / Ge1-xsix。

Low-temperature microwave magnetoresistance in p-Ge and the problem of averaging of the effective masses of light and heavy holes

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