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首页> 外文期刊>Journal of Molecular Structure >Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures
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Investigation of the variation of dielectric properties by applying frequency and voltage to Al/(CdS-PVA)/p-Si structures

机译:通过向Al /(CDS-PVA)/ P-Si结构施加频率和电压来研究介电性能的变化

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摘要

In this study, the effect of frequency and voltage on the dielectric properties of Al/(CdS-PVA)/p-Si structures prepared using cadmium sulfide (CdS)-polivinyl alcohol (PVA) interface material was investigated. For this purpose, real and imaginary permittivity (epsilon' and epsilon ''), dissipation factor (tan delta), ac electrical conduction mechanism (sigma(ac)), real and imaginary part of electric modulus (M' and M") were obtained by using capacitance-conductance (C-G/omega) measurements at frequency between 5kHz - 5MHz and at voltage between (-1V) - (+1V). All parameters were found to depend considerably on the frequency and voltage. epsilon' and epsilon '' reach higher values at low frequencies due to surface states (N-ss) which can easily monitor ac signal, dipolar polarization and interfacial polarization. Short-range mobility of charge carriers caused the increase of both electrical modulus and sigma(ac) with increasing frequency. Moreover, M '' exhibited a peak behavior which shifts to higher frequency with increasing voltage. Peak behavior could be ascribed to both decrease in polarization and surface states. (C) 2020 Elsevier B.V. All rights reserved.
机译:本文研究了频率和电压对硫化镉(CdS)-聚乙烯醇(PVA)界面材料制备的Al/(CdS-PVA)/p-Si结构介电性能的影响。为此,计算了实介电常数和虚介电常数(epsilon’和epsilon’)、损耗因子(tanδ)、交流导电机制(sigma(ac)),在频率为5kHz-5MHz,电压为(-1V)-(+1V)的情况下,通过电容电导(C-G/omega)测量得到电模量的实部和虚部(M’和M’)。发现所有参数在很大程度上取决于频率和电压。由于表面态(N-ss),epsilon’和epsilon’在低频时达到更高的值可方便地监测交流信号、偶极极化和界面极化。电荷载流子的短程迁移率随着频率的增加导致电模量和σ(ac)的增加。此外,M''表现出峰值行为,随着电压的增加,峰值向更高频率移动。峰值行为可归因于极化和表面状态的降低。(C) 2020爱思唯尔B.V.版权所有。

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