Investigation of frequency/thickness dependent configurable dielectric properties on P(VDF-TrFE-CTFE)-MIS structures

摘要

In this paper, a metal-insulator-semiconductor (MIS) capacitor fabricated by using solution-based poly (vinylidene fluoride-trifluoroethylene-Chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) terpolymer as dielectric material was proposed. Dielectric properties of P(VDF-TrFE-CTFE) dielectric material such as high-k constant and low leakage current were demonstrated from the experimental results. The characterizations of P(VDF-TrFE-CTFE) dielectrics of various thicknesses were widely investigated. Notably, there is a thickness dependent dielectric constant characteristic in this study. The dielectric constant was increased with thickness increased. We assume the phenomenon were caused by the material crystallization phase and crystal size differences in different dielectric thickness and interface layer in series with P(VDF-TrFE-CTFE) dielectric.