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首页> 外文期刊>Journal of Materials Science >Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion
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Pristine and Janus monolayers of vanadium dichalcogenides: potential materials for overall water splitting and solar energy conversion

机译:原始和Janus Monolayers of钒二甲甲基甲基化物:用于整体水分裂和太阳能转换的潜在材料

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摘要

Emerging two-dimensional (2D) transition metal dichalcogenides with admirable optoelectronic and electrochemical properties can be used in many practical applications like photocatalysis. In this study, through first-principles calculations, a zealous effort has been devoted to investigating the electronic, photocatalytic, and optical properties of pristine and Janus monolayers of vanadium dichalcogenides. Binding energies and elastic constants indicate the structural and mechanical stability of these layers. Pristine and Janus monolayers show band gaps in a range of 0.4 to 1.6 eV. Band gap alignments by using empirical and DFT approach indicate that VS2, VSe2, and VSeS have large enough kinetic overpotentials for photocatalytic overall water splitting. Additionally, biaxial strain displays that the band gap decreases with the variation of strain from -3% to+3%. In the case of an electric field (E-ext), band gap decreases linearly when varied from -0.8 V angstrom(-1) to+0.8 V angstrom(-1). All pristine and Janus monolayers exhibit a high absorption coefficient similar to 10(5) cm(-1). The results of this study suggest that pristine and Janus monolayers of vanadium dichalcogenides are potential candidates for photocatalytic water splitting and optoelectronic device applications.
机译:新兴的二维(2D)过渡金属二卤化物具有优异的光电和电化学性能,可用于光催化等许多实际应用。在这项研究中,通过第一性原理计算,我们致力于研究二氯化钒原始和Janus单分子膜的电子、光催化和光学性质。结合能和弹性常数表明了这些层的结构和机械稳定性。Pristine和Janus单分子膜的带隙范围为0.4至1.6 eV。通过使用经验和DFT方法进行的带隙比对表明,VS2、VSe2和VSeS具有足够大的动力学过电位,可用于光催化整体水分解。此外,双轴应变显示,带隙随着应变从-3%到+3%的变化而减小。在电场(E-ext)的情况下,当从-0.8 V埃(-1)到+0.8 V埃(-1)变化时,带隙线性减小。所有原始和Janus单分子膜都表现出类似于10(5)cm(-1)的高吸收系数。这项研究的结果表明,纯钒和Janus单分子膜是光催化分解水和光电器件应用的潜在候选材料。

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  • 来源
    《Journal of Materials Science 》 |2021年第21期| 共15页
  • 作者单位

    Minzu Univ China Sch Sci Beijing 100081 Peoples R China;

    Minzu Univ China Sch Sci Beijing 100081 Peoples R China;

    Minzu Univ China Sch Sci Beijing 100081 Peoples R China;

    Univ Educ Dept Phys Div Sci &

    Technol Lahore 54770 Pakistan;

    Minzu Univ China Sch Sci Beijing 100081 Peoples R China;

    King Khalid Univ Adv Funct Mat &

    Optoelect Lab Dept Phys Fac Sci POB 9004 Abha Saudi Arabia;

    Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China;

    Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China;

    Minzu Univ China Sch Sci Beijing 100081 Peoples R China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学 ;
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