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Tuning the Ignition Performance of a Microchip Initiator by Integrating Various Al/MoO3 Reactive Multilayer Films on a Semiconductor Bridge

机译:通过在半导体桥上整合各种Al / Moo3反应性多层膜来调整微芯片引发剂的点火性能

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摘要

Reactive multilayer films (RMFs) can be integrated into semiconducting electronic structures with the use of microelectromechanical systems (MEMS) technology and represent potential applications in the advancement of microscale energy-demanding systems. In this study, aluminum/molybdenum trioxide (Al/MoO3)-based RMFs with different modulation periods were integrated on a semiconductor bridge (SCB) using a combination of an image reversal lift-off process and magnetron sputtering technology. This produced an energetic semiconductor bridge (ESCB)-chip initiator with controlled ignition performance. The effects of the Al/MoO3 RMFs with different modulation periods on ignition properties of the ESCB initiator were then systematically investigated in terms of flame duration, maximum flame area, and the reaction ratio of the RMFs. These microchip initiators achieved flame durations of 60-600 mu s, maximum flame areas of 2.85-17.61 mm(2), and reaction ratios of similar to 14-100% (discharged with 47 mu E/30 V) by simply changing,the modulation periods of the Al/MoO3 RMFs. This behavior was also consistent with a one-dimensional diffusion reaction model. The microchip initiator exhibited a high level of integration and proved to have tuned ignition performance, which can potentially be used in civilian and military applications.
机译:随着微机电系统(MEMS)技术,可以将反应性多层膜(RMF)集成到半导体电子结构中,并且代表微电尺寸能量苛刻系统的推进中的潜在应用。在该研究中,使用图像反转剥离过程和磁控溅射技术的组合在半导体桥(SCB)上集成了具有不同调制周期的铝/钼三氧化物(Al / Moo3)的RMF。这产生了一种充满活力的半导体桥(ESCB) - 具有受控点火性能的发起者。然后,在火焰持续时间,最大火焰区域和RMF的反应比方面系统地研究了对ESCB引发剂的点火性质的不同调节期的效果。这些微芯片引发剂实现了60-600 mu S的火焰持续时间,最大火焰区域为2.85-17.61mm(2),以及通过简单地改变的(用47 mu E / 30 v排出)的反应比率相似的反应比Al / Moo3 RMFS的调制周期。这种行为也与一维扩散反应模型一致。微芯片引发剂表现出高水平的集成度,并证明具有调整点火性能,可能会用于民用和军事应用。

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