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首页> 外文期刊>ACS applied materials & interfaces >Molecular Alignment and Electronic Structure of N,N'-Dibuty-3,4,9,10-perylene-tetracarboxylic-diimide Molecules on MoS2 Surfaces
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Molecular Alignment and Electronic Structure of N,N'-Dibuty-3,4,9,10-perylene-tetracarboxylic-diimide Molecules on MoS2 Surfaces

机译:MOS2表面上的N,N'-Diguty-3,4,9,10-10-10-四羧基二酰亚胺分子的分子取向和电子结构

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The molecular orientation of organic semiconductors on a solid surface could be an indispensable factor to determine the electrical performance of organic-based devices. Despite its fundamental prominence, a clear description of the emergent two-dimensional layered material organic interface is not fully understood yet. In this study, we reveal the molecular alignment and electronic structure of thermally deposited N,N'-dibuty1-3,4,9,10-perylene-dicarboximide (PTCDI-C4) molecules on natural molybdenum disulfide (MoS2) using near-edge X-ray absorption fine structure spectroscopy (NEXAFS). The average tilt angle determination reveals that the anisotropy in the pi* symmetry transition of the carbon K-edge (284-288 eV range) is present at the sub-monolayer regime. Supported by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and resonant photoemission spectroscopy (RPES) measurements, we find that our spectroscopic measurements indicate a weak charge transfer established at the PTCDI-C4/MoS2 interface. Sterical hindrance due to the C4 alkyl chain caused tilting of the molecular plane at the initial thin film deposition. Our result shows a tunable interfacial alignment of organic molecules on transition metal dichalcogenide surfaces effectively enhancing the electronic properties of hybrid organic inorganic heterostructure devices.
机译:固体表面上有机半导体的分子取向可以是确定基于器件的电气性能的不可或缺的因素。尽管它的根本突出,但尚未完全理解突出的二维层状材料有机界面的清晰描述。在这项研究中,我们通过近边缘揭示了在天然钼二硫化物(MOS2)上的热沉积N,N'-Dibuty1-3,4,9,10-Perylene-Dicarboximide(PTCDI-C4)分子的分子取向和电子结构X射线吸收细结构光谱(Nexafs)。平均倾斜角度测定揭示了碳k边缘(284-288eV范围)的PI *对称转变中的各向异性存在于亚单层状态。由紫外线光电子谱(UPS),X射线光电子能谱(XPS)和谐振光学激光谱(RPE)测量支持,我们发现我们的光谱测量表明在PTCDI-C4 / MOS2接口处建立了弱电荷转移。由于C4烷基链引起的C4烷基链倾斜在初始薄膜沉积处引起分子面的倾斜。我们的结果表明了在过渡金属二甲基化物表面上有效增强杂化有机无机异质结构装置的电子性质的可调谐互补对准。

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