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Defect-Induced Exchange Bias in a Single SrRuO3 Layer

机译:单个SRRUO3层中的缺陷诱导的交换偏置

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摘要

Exchange bias stems from the interaction between different magnetic phases, and therefore, it generally occurs in magnetic multilayers. Here, we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to similar to 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.
机译:交换偏置源于不同磁相之间的相互作用,因此,它通常发生在磁性多层中。 这里,我们在氦离子辐射诱导的单个Srruo3层中呈现了一个大的交换偏压。 当能量增加时,诱导缺陷不仅抑制磁化和居里温度,而且在低温下驱动金属绝缘体过渡。 特别地,可以通过照射产生高达0.36 T的大型交换偏置字段。 这种大的交换偏压与嵌入缺陷引入的不同磁性和结构阶段的共存。 我们的作品表明,通过施加离子照射,可以创建和增强复合氧化物中的旋转性能。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2018年第32期|共5页
  • 作者单位

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

    South China Normal Univ Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    Leibniz Inst Solid State &

    Mat Res Helmholtzstr 20 D-01069 Dresden Germany;

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

    South China Normal Univ Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    Shenzhen Univ Coll Optoelect Engn Shenzhen Key Lab Laser Engn Shenzhen 518060 Peoples R China;

    South China Normal Univ Inst Adv Mat Guangzhou 510006 Guangdong Peoples R China;

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

    Helmholtz Zentrum Dresden Rossendorf Inst Ion Beam Phys &

    Mat Res Bautzner Landstr 400 D-01328 Dresden Germany;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    exchange bias; magnetization; oxide thin film; lattice distortion; defect engineering;

    机译:交换偏置;磁化;氧化物薄膜;晶格变形;缺陷工程;
  • 入库时间 2022-08-20 16:32:17

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