Band Gap Engineering and Room-Temperature Ferromagnetism by Oxygen Vacancies in SrSnO3 Epitaxial Films

摘要

Perovskite SrSnO3 (SSO) thin films were epitaxially grown on LaAlO3 (001) substrates by pulsed laser deposition at various oxygen pressures. X-ray diffraction was carried out to characterize the microstructure of the films, and the results showed that the unit-cell volume of the films increased gradually with lowering the growth oxygen pressures while remaining the perovskite structure. X-ray photoelectron spectroscopy results indicated that oxygen vacancies (OVs) existed in SSO thin films. Optical property measurements showed that all samples have a transmittance of more than 75% in the visible and near-infrared wavelength region. Furthermore, the band gaps of SSO films were found to increase from 4.56 to 5.21 eV with the decrease of deposition oxygen pressures calculated by linear fitting absorption edges of optical transmittance. In order to further ascertain the effect of OVs on band gaps of SSO films, the as-deposited 10 Pa film was annealed at 10(-4) Pa oxygen pressures and the band gap was found to increase by more than 1 eV. Density functional theory was used to explain the effects of OVs on band gaps and the ferromagnetism of SSO films, and the results suggested that an impurity energy level of OVs appeared near the Fermi level, causing the widening of the band gaps, which is consistent with our experimental results. Meanwhile, the room-temperature ferromagnetism was observed in the SSO films, and saturation magnetization increased gradually from 4.46 to 7.69 emu/cm(3) with decreasing the growth oxygen pressures.