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首页> 外文期刊>ACS applied materials & interfaces >Tandem Si Micropillar Array Photocathodes with Conformal Copper Oxide and a Protection Layer by Pulsed Laser Deposition
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Tandem Si Micropillar Array Photocathodes with Conformal Copper Oxide and a Protection Layer by Pulsed Laser Deposition

机译:串联Si Micropillar阵列光阴离子,具有保形氧化铜和保护层脉冲激光沉积

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This work demonstrates the influence of high-quality protection layers on Si–Cu_(2)O micropillar arrays created by pulsed laser deposition (PLD), with the goal to overcome photodegradation and achieve long-term operation during photoelectrochemical (PEC) water splitting. Sequentially, we assessed planar and micropillar device designs with various design parameters and their influence on PEC hydrogen evolution reaction. On the planar device substrates, a Cu_(2)O film thickness of 600 nm and a Cu_(2)O/CuO heterojunction layer with a 5:1 thickness ratio between Cu_(2)O to CuO were found to be optimal. The planar Si/Cu_(2)O/CuO heterostructure showed a higher PV performance (J _(sc) = 20 mA/cm~(2)) as compared to the planar Si/Cu_(2)O device, but micropillar devices did not show this improvement. Multifunctional overlayers of ZnO (25 nm) and TiO_(2) (100 nm) were employed by PLD on Si/Cu_(2)O planar and micropillar arrays to provide a hole-selective passivation layer that acts against photocorrosion. A micropillar Si/ITO-Au/Cu_(2)O/ZnO/TiO_(2)/Pt stack was compared to a planar device. Under optimized conditions, the Si/Cu_(2)O photocathode with Pt as a HER catalyst displayed a photocurrent of 7.5 mA cm~(–2) at 0 V vs RHE and an onset potential of 0.85 V vs RHE, with a stable operation for 75 h.
机译:这项工作表明,高质量保护层对由脉冲激光沉积(PLD)产生的Si-Cu_(2)o Micropillar阵列的影响,其目标是克服光电降解和在光电化学(PEC)水分子期间实现长期操作。顺序地,我们评估了具有各种设计参数的平面和微储槽装置设计及其对PEC氢气进化反应的影响。在平面装置基板上,发现CU_(2)O膜厚度为600nm和Cu_(2)o / CuO异质结层的Cu_(2)O至CuO之间的5:1厚度比,是最佳的。与平面Si / Cu_(2)O设备相比,平面Si / Cu_(2)O / CuO异质结构显示出更高的PV性能( j _(sc)= 20mA / cm〜(2)),但微米器件没有显示出这种改进。通过PLD在Si / Cu_(2)o平面和微米阵列上采用ZnO(25nm)和TiO_(2)(100nm)的多功能重叠,以提供一种充满光电腐蚀的孔选择性钝化层。将Micropillar Si / ITO-AU / CU_(2)O / ZnO / TiO_(2)/ PT堆叠与平面装置进行比较。在优化条件下,用Pt作为催化剂的Si / Cu_(2)O光电阴极显示在0V VS RHE的0V VS Rhe的光电流和0.85V与Rhe的起始电位,具有稳定的操作75小时。

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