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首页> 外文期刊>ACS applied materials & interfaces >A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors
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A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors

机译:A-D-A型具有双(烷基磺酰基)亚甲基取代基的半导体小分子和有机场效应晶体管的电荷极性控制

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摘要

In this study, we synthesize four different kinds of bis( alkylsulfanyl)methylene-substituted 4,9-dihydro- sindaceno[1,2-b:5,6-b'] dithiophene (IDT)-based acceptor-donor-acceptor (A-D-A) type small molecules (IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC) by incorporating electron-withdrawing halogen atoms or electron-releasing thiophene spacers. Herein, enhanced structural planarity and crystalline intermolecular packing are induced by the sp(2)-hybridized C = C double bond side chains and sulfur-sulfur chalcogen interactions. The fine control of intramolecular charge transfer modulates the electrochemical characteristics and the resulting carrier polarity in organic field-effect transistors (OFETs). Well-balanced ambipolar, n-dominant, and p-dominant charge transport properties are successfully demonstrated in OFETs by modulating the electron-donating or withdrawing strength based on the A-D-A structural motif, resulting in hole/electron mobilities of 0.599/0.553, 0.003/0.019, 0.092/0.897, and 0.683/0.103 cm(2)/V.s for IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC respectively, after thermal annealing at 200 degrees C. Thermal annealing of the as-cast films improves the intermolecular packing in an edge-on fashion, which is investigated in detail by grazing incidence X-ray scattering. Finally, complementary logic circuits, i.e., NOT, NAND, and NOR, are fabricated by assembling p-dominant IDSTIC and n-dominant IDSIC-4Cl OFETs. Therefore, a simple and efficient molecular design strategy for fine tuning the charge polarity and charge transport properties of OFET devices is presented.
机译:在这项研究中,我们合成了四种不同种类的双(烷基磺酰基)亚甲基取代的4,9-二氢 - Sindaceno [1,2-B:5,6-B']二噻吩(IDT)的受体 - 供体 - 受体( ADA)通过结合吸电子卤素原子或电子释放噻吩间隔物,键入小分子(IDSIC-4F,IDSIC-4CL和Idstic)。本文,通过SP(2) - 次次化的C = C双键侧链和硫磺硫核酸糖相互作用诱导增强的结构平面和结晶分子间包装。分子内电荷转移的细型控制在有机场效应晶体管(OFET)中调节电化学特性和所得到的载波极性。通过调节基于ADA结构基序的电子捐赠或抽出强度,成功地证明了均衡的Ambipolar,N优势和P-显性电荷传输性能,导致0.599 / 0.553,0.003 /的孔/电子液体。 IDSIC,IDSIC-4F,IDSIC-4CL和IDSTIC的0.019,0.092 / 0.897和0.683 / 0.103cm(2)/ vs分别在200摄氏度下热退火后进行热退火。铸膜的热退火改善了分子间以边缘的方式包装,通过放牧入射X射线散射详细研究。最后,通过组装P-POMINANT IDSTIC和N-POMINANT IDSIC-4CLET来制造互补逻辑电路,即,NAND和NOR。因此,提出了一种简单有效的微调电荷极性和电荷传输性能的分子设计策略。

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