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Na2S Treatment and Coherent Interface Modification of the Li-Rich Cathode to Address Capacity and Voltage Decay

机译:NA2S处理和相干界面改性锂富阴极,解决容量和电压衰减

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摘要

Li-rich and Mn-based layered oxides are the most promising candidates for next-generation high energy density cathode materials. However, inherent problems including poor rate performance, continuous capacity degradation, and voltage fading hinder their commercial utilization. Herein, a lattice- and interfacial-modified Li1.2Mn0.54Co0.13Ni0.13O2 with a pristine-layered bulk structure, Na- and S-doped transition phase, and epitaxially grown Na2Mn (SO4)(2) (C2/c symmetry) layer were constructed by Na2S treatment. The monoclinic Na2Mn(SO4)(2) not only acts as an interface protective layer, alleviating the harmful electrode-electrolyte reactions, but also promotes formation of oxygen vacancy in the layered structure, enhancing reversibility of oxygen redox. The Na and S surface lattice doping leads to enhanced Li+ diffusion and alleviates the chance of oxygen release. With the positive effects provided by the stable interfacial layer and lattice modification, the modified cathodes with moderate Na2S treatment shows alleviated capacity and voltage decay and enhanced electrochemical kinetics. Especially, the washed cathode with 3 wt % Na2S treatment delivers a discharge specific capacity of 305 at 0.1 C and 219 mA h g(-1) at 1 C, as well as 93.15% capacity retention and 88.20% voltage retention after 200 cycles at 1 C.
机译:富含富含Mn的层状氧化物是下一代高能量密度阴极材料最有希望的候选者。然而,固有问题包括差价率差,持续的容量劣化和电压衰落阻碍了其商业利用率。在本文中,具有原始层状散装结构,Na-和S掺杂的转变相和外延生长的Na 2 Mn(SO 4)(2)(C2 / C对称)层由Na 2 S处理构成。单斜螺旋Na 2Mn(SO 4)(2)不仅用作界面保护层,减轻了有害电极 - 电解质反应,而且促进了层状结构中的氧空位的形成,增强了氧氧化还原的可逆性。 Na和S表面格掺杂导致增强的Li +扩散,并减轻了氧释放的机会。利用稳定的界面层和晶格改性提供的正效应,具有中等NA2S处理的改性阴极显示出缓解的容量和电压衰减和增强的电化学动力学。特别是,用3wt%Na 2 S处理的洗涤的阴极在1℃下以0.1c和219 mA Hg(-1)的排出比容量,以及93.15%的容量保留和88.20%的电压保留在1次C。

著录项

  • 来源
    《ACS applied materials & interfaces》 |2020年第38期|共9页
  • 作者单位

    Chengdu Univ Technol Coll Mat &

    Chem &

    Chem Engn Chengdu 610059 Peoples R China;

    Shaoguan HEC Technol R&

    D Co Ltd Ruyuan 512000 Guangdong Peoples R China;

    Shaoguan HEC Technol R&

    D Co Ltd Ruyuan 512000 Guangdong Peoples R China;

    Sichuan Univ Sch Chem Engn Chengdu 610065 Peoples R China;

    Sichuan Univ Sch Chem Engn Chengdu 610065 Peoples R China;

    Chengdu Univ Technol Coll Mat &

    Chem &

    Chem Engn Chengdu 610059 Peoples R China;

    Chengdu Univ Technol Coll Mat &

    Chem &

    Chem Engn Chengdu 610059 Peoples R China;

    Chengdu Univ Technol Coll Mat &

    Chem &

    Chem Engn Chengdu 610059 Peoples R China;

    Chengdu Univ Technol Coll Mat &

    Chem &

    Chem Engn Chengdu 610059 Peoples R China;

    Chengdu Univ Technol Coll Mat &

    Chem &

    Chem Engn Chengdu 610059 Peoples R China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 化学工业;
  • 关键词

    rich cathode; lattice doping; interfacial modification; oxygen vacancy; oxygen redox reaction;

    机译:富阴极;格子掺杂;界面改性;氧气空位;氧氧化还原反应;
  • 入库时间 2022-08-20 16:30:08

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