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首页> 外文期刊>ACS applied materials & interfaces >Water Oxidation through Interfacial Electron Transfer by Visible Light Using Cobalt-Modified Rutile Titania Thin-Film Photoanode
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Water Oxidation through Interfacial Electron Transfer by Visible Light Using Cobalt-Modified Rutile Titania Thin-Film Photoanode

机译:通过使用钴改性的金属丝石薄膜光电仪通过可见光通过界面电子转移来氧化水氧化

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TiO2 is a good photoanode material for water oxidation to form O-2; however, UV light (lambda < 400 nm) is necessary for this system to operate. In this work, cobalt species were introduced onto a rutile TiO2 thin film grown on a fluorine-doped tin oxide (FTO) substrate for visible-light activation of TiO2 and to construct water oxidation sites. TiO2 thin films were prepared on the FTO surface by the thermohydrolysis of TiCl4, followed by annealing at 723 K in air; the loading of the cobalt species was achieved simply by immersing TiO2/FTO into an aqueous Co(NO3)(2) solution at room temperature, followed by heating at 423 K in air. Physicochemical analyses revealed that the cobalt species deposited on the TiO2 film was alpha-Co-3(OH)(4)(NO3)(2) and that the cobalt-modified TiO2 thin-film electrode had a visible-light absorption band that extended to 700 nm due to interfacial electron transitions from the cobalt species to the conduction band of TiO2. Upon anodic polarization in the presence of visible light, the cobalt-modified TiO2 thin-film electrode generated an anodic photocurrent with an onset potential of +0.1 V vs RHE, which was consistent with that of pristine rutile TiO2. Product analysis during the controlled potential photoelectrolysis in the presence of an applied bias smaller than 1.23 V under visible light showed that water oxidation to O-2 occurred on the cobalt-modified TiO2/FTO. This study demonstrates that a visible-light-driven photoelectrochemical cell for water oxidation can be constructed through the use of earth-abundant metals without the need for a complicated preparation procedure.
机译:TiO2是用于水氧化以形成O-2的良好光电码材料;然而,UV光(Lambda <400nm)对于该系统进行操作是必需的。在这项工作中,将钴物种引入到氟掺杂氧化锡(FTO)底物上生长的金刚石TiO2薄膜,以便可见TiO 2和构建水氧化位点。通过TiCl4的热水解在FTO表面上制备TiO2薄膜,然后在空气中以723k退火;通过将TiO 2 / FTO浸入室温下的含水CO(NO 3)(2)溶液中,通过将TiO 2 / FTO浸入到室温下的溶液中进行,然后在空气中加热至423k。物理化学分析显示,沉积在TiO 2膜上的钴物质是α-CO-3(OH)(4)(4)(2),并且钴改性的TiO 2薄膜电极具有延伸的可见光吸收带由于从钴物种到TiO 2的导电带的界面电子转变为700nm。在可见光存在下阳极偏振时,钴改性的TiO 2薄膜电极产生阳极光电流,其发作潜力为+0.1V与rhe,这与原始金红石TiO2一致。在可见光下施加偏压存在下控制势光电解析期间的产品分析表明,在钴改性的TiO 2 / FTO上发生了对O-2的水氧化。该研究表明,可以通过使用土坯金属来构建用于水氧化的可见光光电化细胞,而无需复杂的制备程序。

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