Ultrathin Quasibinary Heterojunctioned ReS2/MoS2 Film with Controlled Adhesion from a Bimetallic Co-Feeding Atomic Layer Deposition

摘要

Heterojunctioned transition-metal dichalcogenide (TMD) films with regulatable interface adhesion have shown broad application prospects in the design of advanced materials and the manufacturing of novel functional devices. To date, the controlled fabrication of TMD heterojunctions or heterojunction-rich films with tailorable thickness and composition has proved challenging. Herein, a bimetallic co-feeding atomic layer deposition (ALD) system was developed capable of fulfilling these requirements. In the co-feeding ALD fabrication, by adjusting the Re/Mo ratio, 3-layered quasibinary heterojunctioned ReS2/MoS2 films with adjustable composition and grain size were prepared. Moreover, the measurements between atomic force microscopy Si tip coated with the ReS2/MoS2 films and films on the substrate indicate that the adhesion force can be regulated from 13.5 to 136.3 nN. Further experimental data and theoretical analysis show that the adhesion force between the coated tip and films possesses a positive correlation with the "tip-film unanimity" in composition.