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Size-Dependent Band-Gap and Molar Absorption Coefficients of Colloidal CuInS2 Quantum Dots

机译:胶体Cuins2量子点的尺寸依赖带间隙和摩尔吸收系数

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摘要

The knowledge of the quantum dot (QD) concentration in a colloidal suspension and the quantitative understanding of the size dependence of the band gap of QDs are of crucial importance from both applied and fundamental viewpoints. In this work, we investigate the size dependence of the optical properties of nearly spherical wurtzite (wz) CuInS, (CIS) QDs in the 2.7 to 6.1 nm diameter range (polydispersity = 10%). The QDs are synthesized by partial Cu+ for In3+ cation exchange in template Cu2-xS nanocrystals, which yields CIS QDs with very small composition variations (In/Cu = 0.91 +/- 0.11), regardless of their sizes. These well-defined QDs are used to investigate the size-dependence of the band gap of wz CIS QDs. A sizing curve is also constructed for chalcopyrite CIS QDs by collecting and reanalyzing literature data. We observe that both sizing curves follow primarily a 1/d dependence. Moreover, the molar absorption coefficients and the absorption cross-section per CIS formula unit, both at 3.1 eV and at the band gap, are analyzed. The results demonstrate that the molar absorption coefficients of CIS QDs follow a power law at the first exciton transition energy (epsilon(E1)= 5208d(2.45)) and scale with the QD volume at 3.1 eV. This latter observation implies that the absorption cross-section per unit cell at 3.1 eV is size-independent and therefore can be estimated from bulk optical constants. These results also demonstrate that the molar absorption coefficients at 3.1 eV are more reliable for analytical purposes, since they are less sensitive to size and shape dispersion.
机译:胶体悬架中量子点(QD)浓度的知识和对QD带隙的频带差距的尺寸依赖性的定量理解具有重要意义的应用和基本观点。在这项工作中,我们研究了几乎球形紫硝基钛矿(WZ)CuIns(CIS)QDS在2.7至6.1nm直径范围内的光学性质的尺寸依赖性(多分散性& 10%)。 QD通过部分Cu +合成,用于在模板Cu2-XS纳米晶体中的In3 +阳离子交换,其产生具有非常小的组成变化(In / Cu = 0.91 +/- 0.11),而不管它们的尺寸如何。这些明确定义的QD用于研究WZ CIS QD的带隙的尺寸依赖性。通过收集和重叠文献数据,还通过收集和重叠的文献数据构建施胶曲线。我们观察到,两种尺寸曲线主要遵循1 / D依赖性。此外,分析了在3.1eV和带隙处的3.1eV和带隙的每个顺式配方单元的摩尔吸收系数和吸收横截面。结果表明,CIS QD的摩尔吸收系数在第一激子过渡能量(ε(E1)= 5208d(2.45))上遵循动力法,并在3.1eV时与QD体积进行缩放。后一种观察意味着3.1eV时每单位电池的吸收横截面是尺寸无关的,因此可以从散装光学常数估计。这些结果还表明,对于分析目的,3.1eV的摩尔吸收系数更可靠,因为它们对大小和形状分散的敏感性。

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