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Improved dielectric and energy storage properties of poly(vinyl alcohol) nanocomposites by strengthening interfacial hydrogen-bonding interaction

机译:通过强化界面氢键相互作用改善聚(乙烯醇)纳米复合材料的介电和储能性能

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Dielectric capacitor has drawn much attention recently both in academia and in industry because of its high power density and excellent cycle performances. In order to meet the demand for high energy density, high-e (dielectric permittivity) nanoparticles are dispersed into polymer matrices to form nanocomposites with both high epsilon and high E-b (breakdown strength). Polymer-nanoparticle interface has great influence on energy storage properties. In order to find out whether we can prepare well-dispersed nanocomposites by forming a thin coating layer (less than 2 nm) on the surface of nanoparticles with strengthened interfacial interaction, such as hydrogen-bonding interaction, a specific coating molecule, i.e., 3,4,5-trihydrobenzoic acid (or Gallic Acid, GA), was selected for surface modification of BaTiO3 (BT) in this research. A coating layer of only 1.6 nm in thickness formed by the reaction between phenolic hydroxyl groups in GA and surface hydroxyl groups on BT to produce modified BT@GA nanoparticles. Hydrogen-bonding interaction did form between GA and the hydroxyl groups in PVA matrix. This ensured fine dispersion, higher epsilon, higher E-b and higher energy storage density for PVA + BT@GA nanocomposites. For PVA + 40% BT@GA, e reached 51 at 1 kHz, while Eb was 144 MV/m, which is twice as that of PVA + 40% BT. The discharging energy density of PVA + 40% BT@GA reaches 0.554 J/cm(3) at 50 MV/m, about fourth times as that of pristine PVA.
机译:由于其高功率密度和优异的循环表演,介电电容最近曾在学术界和工业中汲取了很多关注。为了满足对高能量密度的需求,将高E(介电介电常数)纳米颗粒分散到聚合物基质中以形成纳米复合材料,具有高ε和高E-B(击穿强度)。聚合物 - 纳米粒子界面对储能性能影响很大。为了确定我们是否可以通过在纳米颗粒的表面上形成薄涂层(小于2nm),以强化界面相互作用,例如氢键相互作用,特定涂层分子,即3,以制备良好分散的纳米复合材料选择了4,5-三元苯甲酸(或无碱酸,GA),在本研究中选择BATIO3(BT)的表面改性。通过在BT上的Ga和表面羟基中的酚羟基之间的反应形成的厚度仅为1.6nm的涂层,以产生改性的Bt @ Ga纳米颗粒。在PVA基质中的Ga和羟基之间形成氢键相互作用。这确保了精细分散,更高的ε,更高的E-B和更高的PVA + BT @ GA纳米复合材料的储能密度。对于PVA + 40%BT @ Ga,E在1 kHz的e达到51,而EB为144 mV / m,这是PVA + 40%BT的两倍。 PVA + 40%BT @ Ga的放电能量密度在50mV / m处达到0.554J / cm(3),大约第四次,即原始PVA。

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