Allylsilanes in 'tin-free' oximation, alkenylation, and allylation of alkyl halides

摘要

Tin-free oximation, vinylation, and allylation of alkyl halides have been developed by using allylsilanes as di-tin surrogates. Initiation of the radical process with a peroxide provides the silyl radical, which can abstract a halogen from the corresponding alkyl halide. The resulting carbon-centered radical then adds to various acceptors, including a sulfonyloxime, a vinylsulfone, and an allylsulfone, leading to formation of the desired products along with the corresponding allylsulfone resulting from the reaction of the PhSO _2 radical with the allylsilane precursor. Better results were generally obtained with methallylsilane 1b than with 1a. This observation was rationalized by invoking the higher nucleophilicity of 1b and the faster β-fragmentation of the corresponding β-silyl radical intermediate. Calculation of the energy barrier for the β-fragmentation of a series of β-silyl radicals at the DFT level supported this hypothesis. Finally, a second version of these oximation and vinylation reactions, based on the utilization of 3-tris(trimethylsilyl)silylthiopropene, was devised, affording the desired oximes and olefins in reasonable yields. This strategy allowed the title reaction to be performed under milder conditions (AIBN, benzene, 80°C), as a result of the easier β-fragmentation of the C-S bond as compared with the C-Si bond.