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In-situ N-doped MnCO3 anode material via one-step solvothermal synthesis: Doping mechanisms and enhanced electrochemical performances

机译:通过一步溶液合成原位N-掺杂MnCO3阳极材料:掺杂机构和增强的电化学性能

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摘要

In-situ N-doped MnCO3 microcrystal was prepared by a mild one-step solvothermal process for the first time. The influences of N-doping on microstructures and electrochemical performances of MnCO3 microcrystal have been investigated systematically. A plausible mechanism for the in-situ N-doping in MnCO3 also has been proposed. It is found that nitrogen was successfully doped into the MnCO3 by the substitution of lattice oxygen, generating a specific defect structure with oxygen vacancies and narrowing the band gap of MnCO3 effectively from 5.021 to 3.885 eV. When used as anode material, the as-obtained N-doped MnCO3 exhibits outstanding electrochemical performances: it delivers a large capacity of 685 mAh g(-1) after 600 cycles at 1 C; exhibits a superior high-rate performance and long-term stability with a high capacity of 437 mAh g(-1) even after 1000 cycles at a very large current rate of 5 C. Compared with the pristine MnCO3, such the outstanding electrochemical performances of N-doped MnCO3 should be attributed to the specific defect structure provided by N-doping, which can not only create more active sites for lithium storage, but also improve the poor electronic conductivity of MnCO3. This work can offer an effective and facile strategy to realize in-situ N-doping by wet chemical synthesis route, as well as enhance the electrochemical performances of transition metal carbonates.
机译:原位N-掺杂的MNCO3微晶首次通过温和的一步溶液溶剂制备。系统地研究了N-掺杂对MNCO3微晶的微观结构和电化学性能的影响。还提出了在MNCO3中原位N-掺杂的合理机制。发现氮气通过晶格氧的取代成功掺杂到MNCO3中,产生具有氧空位的特定缺陷结构,从5.021到3.885eV有效地缩小MNCO3的带隙。当用作阳极材料时,AS获得的N掺杂MNCO3表现出卓越的电化学性能:在1℃下600次循环后,它在600次循环后提供大容量的685mAhg(-1)。表现出优异的高速率性能和长期稳定性,即使在100℃的非常大的电流速率为1000次循环后,高容量为437mAhg(-1)。与原始MNCO3相比,这种卓越的电化学性能相比n掺杂的MnCo3应归因于N-掺杂提供的特定缺陷结构,其不仅可以为锂储存产生更多的活性位点,而且还可以提高MNCO3的差的电子电导率。这项工作可以提供有效的和容易的策略来实现湿化学合成途径的原位n掺杂,以及增强过渡金属碳酸盐的电化学性能。

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