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Dielectric screening enabled ultrastable luminescence in CsPbBr3 perovskite crystal encapsulated by ferroelectric Poly(vinylidene fluoride)

机译:通过铁电聚(偏二氟化乙烯乙烯)封装的CSPBBR3钙钛矿晶体中的介电筛选能够在CSPBBR3钙钛矿晶体中

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Metal halide perovskites nanocrystals (NCs) are emerging as competitive alternatives for semiconductor NCs in the fields of consumer optoelectronic devices; however, boosting their long-term stability still needs extensive study. Encapsulation of perovskite NCs with polymer becomes a promising strategy, yet the dielectric screening effect on the excitons of perovskites from the polymer matrix has seldom been considered. Here, we demonstrated this effect in high-permittivity poly(vinylidene fluoride) (PVDF) encapsulated CsPbBr3 (CPB) crystals CPB/PVDF composites films. The in situ nonuniform growth mechanism of CPB crystal with respect to its concentration in the precursor was revealed from multiscale structure observations. Comprehensive physical properties of CPB/PVDF composites with varying CPB concentrations were thoroughly investigated. Composite films made from precursors with CPB concentration increasing to saturation all showed bright luminescence, and an exceptional long fluorescence lifetime up to tau(avg) = 731 ns was observed, much superior to other polymers with lower permittivity encapsulated CPB composites. The stable luminescence is understood from the strong interplay between electron-hole Coulomb interactions in CPB and its surrounding high-permittivity PVDF. Meanwhile, the interfacial interaction between CPB and PVDF greatly influenced the crystallization behavior of PVDF polymer at nanoscale, thus altered the dielectric and mechanical properties of CPB/PVDF composite films accordingly. Finally, a warm white light-emitting diode device was assembled based on green light emitting CPB/PVDF film, positively implying its potential application in high-performance optoelectronic devices.
机译:金属卤化物钙质植物纳米晶体(NCS)是作为消费光电器件领域的半导体NCS的竞争替代品;然而,提高他们的长期稳定仍需要广泛的研究。具有聚合物的钙钛矿NCS的封装成为一个有希望的策略,但是对来自聚合物基质的钙锌矿的激膜的介电筛选效应很少被考虑。在这里,我们证明了在高介质聚(偏二氟乙烯)(PVDF)包封的CSPBBR3(CPB)晶体CPB / PVDF复合材料膜中的这种效果。从多尺度结构观察结果揭示了CPB晶体相对于其浓度的CPB晶体的原位不均匀生长机制。彻底研究了具有不同CPB浓度的CPB / PVDF复合材料的综合物理性质。由CPB浓度的前体制成的复合薄膜随着饱和而饱和的所有表现出明亮的发光,并且观察到TAU(AVG)= 731ns的卓越的长荧光寿命,与具有较低介电常数封装的CPB复合材料的其他聚合物高得多。从CPB中的电子空穴库仑相互作用与其周围的高介电常数PVDF之间的强烈相互作用,理解稳定的发光。同时,CPB和PVDF之间的界面相互作用大大影响了PVDF聚合物在纳米级的结晶行为,因此相应地改变了CPB / PVDF复合膜的电介质和机械性能。最后,基于绿色发光的CPB / PVDF膜组装了暖白色发光二极管器件,积极地暗示其在高性能光电器件中的潜在应用。

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