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Comparative evaluation of two different methods for thermal shock resistance of laminated ZrB2-SiCw/BN ceramics

机译:层压ZRB2-SiCW / BN陶瓷两种不同方法对两种不同方法的比较评价

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摘要

The thermal shock resistance (TSR) of laminated ZrB2-SiCw/BN ceramic was evaluated through indentation quench and quenching-strengthening methods. It was correspondingly compared to monolithic ZrB2-SiCw ceramic. In the indentation-quench method with consideration to crack propagation on the surface layer, the critical thermal shock temperature of laminated ZrB2-SiCw/BN ceramic with surface residual tensile stress was 550 degrees C, which was lower than monolithic ZrB2-SiCw/BN ceramic (600 degrees C). Unlike the microscopic method of crack growth measurement through indentation-quench testing, the quenching-strengthening method, which was based on the macroscopic properties of the material, mainly characterizing the residual strength subsequently to thermal shock, the critical thermal shock temperatures of the laminates and monolithic were 609 degrees C and 452 degrees C, respectively. Compared to the brittle fracture of ZrB2-SiCw ceramics, the deflection, bifurcation and delamination of the cracks as the main TSR mechanisms of the laminated ceramics, were revealed through quenching strengthening method, which was more suitable for the TSR characterization of laminated ceramics.
机译:通过压痕淬火和淬火强化方法评价层压ZRB2-SiCw / BN陶瓷的热抗冲击性(TSR)。与单片ZRB2-SICW陶瓷相比,它相应地相比。在考虑到表面层上的裂纹淬火方法的压紧 - 淬火方法中,具有表面残余拉应力的层压ZrB2-SiCw / BN陶瓷的临界热冲击温度为550℃,低于单片ZRB2-SiCW / BN陶瓷(600℃)。与通过压紧淬火试验的裂纹生长测量的显微镜方法不同,淬火强化方法基于材料的宏观性质,主要表征随后对热冲击的剩余强度,层压板的临界热冲击温度单片分别为609℃和452℃。与ZrB2-SiCW陶瓷的脆性断裂相比,通过淬火强化方法揭示了作为层压陶瓷的主TSR机制的裂缝,分叉和分层,揭示了淬火强化方法,更适合于层压陶瓷的TSR表征。

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