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Thermal Shock Resistance of Si_3N_4/hBN Ceramic Composites

机译:Si_3N_4 / HBN陶瓷复合材料的热抗震性

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Si_3N_4/hBN composites were fabricated by hot isostatic pressing at 1700°C/3h with 1, 3 and 5 wt. % micro-sized or nano-sized hexagonal boron nitride particles added to silicon nitride matrix. An indentation quench test method was used for estimation of thermal shock resistance of monolithic Si_3N_4 and Si_3N_4/hBN composites. Thermal shock resistance of the composites increased with the increase of size and volume of hBN particles. The critical temperature difference for the composites with micro-sized hBN was significantly higher (over 900°C) compared to the monolithic silicon nitride (580°C).
机译:通过在1700℃/ 3H的热等静压下通过1,3和5重量加压来制造Si_3N_4 / HBN复合材料。添加到氮化硅基质中的%微尺寸或纳米尺寸六方氮氮化物颗粒。压痕骤冷试验方法用于估计单片Si_3N_4和Si_3N_4 / HBN复合材料的热抗震性。随着HBN颗粒的尺寸和体积的增加,复合材料的热抗震性增加。与单片氮化硅(580℃)相比,微尺寸HBN的复合材料的临界温度差异显着更高(超过900℃)。

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