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Thermal Shock Resistance of SiC Whisker Reinforced Si_3N_4 Ceramic Composites

机译:SiC晶须增强Si_3N_4陶瓷复合材料的抗热震性

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Thermal shock resistance of hot-pressed SiCw/Si_3N_4 (w = whisker) composites was investigated by thermal shock resistance parameters and water quenching test. The results showed that the thermal shock resistance to fracture initiation and crack-stable repropagation deteriorated with increasing SiCw content in spite of the improvement of fracture toughness, K_(IC). This could be attributed to the great decrease of strength, σ, and the considerable increase of Young's modulus, E, and thermal expansion coefficient, α, resulting from the addition of SiC whiskers. The curves of the residual strength, σ_r, after water quenching versus thermal shock temperature difference, ΔT, e.g. σ_r-ΔT, showed good relationships with the calculated thermal stress fracture resistance parameter, R, and thermal stress crack stability parameter, R_(st). The crack propagation of SiC whisker reinforced Si_3N_4 occurred primarily in a quasi-static manner, and it could be mainly attributable to SiC whiskers' pulling-out and bridging toughening effects.
机译:通过抗热震参数和水淬试验研究了热压SiCw / Si_3N_4(w =晶须)复合材料的抗热震性能。结果表明,尽管提高了断裂韧性K_(IC),但随着SiCw含量的增加,对断裂​​萌生和裂纹稳定的再传播的抗热震性能却下降。这可能归因于由于添加SiC晶须而导致的强度σ的大幅降低以及杨氏模量E和热膨胀系数α的显着增加。水淬后的残余强度σ_r与热冲击温度差ΔT(例如σ_r-ΔT与计算出的热应力抗裂参数R和热应力裂纹稳定性参数R_(st)表现出良好的关系。 SiC晶须增强Si_3N_4的裂纹扩展主要以准静态方式发生,这可能归因于SiC晶须的拔出和桥接增韧作用。

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