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In situ synthesis of homogeneously dispersed SiC nanowires in reaction sintered silicon-based ceramic powders

机译:在反应烧结硅基陶瓷粉末中均匀分散的SiC纳米线的原位合成

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摘要

The synthesis of homogeneously dispersed SiC nanowires in the ceramic powders arouses considerable interests due to its potential applications as reinforcements in the ceramic matrix composites. Herein, we reported a facile and novel approach to in situ synthesize homogeneously dispersed SiC nanowires in the reaction sintered silicon based ceramic powders. The as-synthesized nanowires exhibited the single-crystalline 3C-SiC with diameters of 50-200 nm and lengths ranging from tens to over 100 mu m. Combining further experimental results and thermodynamics analysis, we demonstrated the importance of the free silicon for the in situ synthesis of SiC nano wires in the reaction sintered silicon-based ceramic powders, since it increased the equilibrium vapor pressure of SiO gaseous product in the system.
机译:在陶瓷粉末中的均匀分散的SiC纳米线的合成引起了相当大的兴趣,因为其潜在的应用作为陶瓷基质复合材料中的增强剂。 在此,我们报道了一种容易和新的原位方法在反应烧结硅基陶瓷粉末中的均匀分散的SiC纳米线。 作为合成的纳米线显示出直径为50-200nm的单晶3c-siC,长度从数度到100多m m。 结合进一步的实验结果和热力学分析,我们证明了自由硅的重要性,用于反应烧结硅基陶瓷粉末中的SiC纳米线的原位合成,因为它增加了系统中SiO气态产物的平衡蒸气压。

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