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Structure, morphology and electrical transport properties of the Ti3AlC2 materials

机译:Ti3AlC2材料的结构,形态和电气传输性能

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A study of Ti3AlC2 materials prepared with Self Propagating High-Temperature Synthesis (SHS) method followed by uniaxial hot pressing (HP) is presented. Three groups of materials have been synthesized from different substrates using pure element and/or intermetallic powders. The SHS prepared powders and dense HP materials were characterized with x-ray diffraction and were found to contain more than 80% of the Ti3AlC2 MAX phase with anisotropic distribution of the crystallographic directions of its crystallites with respect to the HP pressure axis. This is accompanied with different mean size of the crystallites. The measured temperature dependencies of the electrical resistivity are consistent with those reported in the literature but show a higher R(300 K)/R(4 K) ratio of 3.5. They also exhibit slightly different values of thermal coefficient and residual resistivity between the materials studied. The magnetoresistance at 4 K and 300 K, investigated up to 35 kOe applied field, revealed a quadratic field dependence. The corresponding values of the electronic carrier density are found to be of 30% larger at 4 K than at 300 K and different between the materials studied. The results are discussed with respect to the Local Density of States calculations and compared with the resistivity and magnetoresistance data for others materials, like copper, and aluminum.
机译:提出了一种研究用自捕获高温合成(SHS)方法制备的Ti3AlC2材料,其次是单轴热压(HP)。使用纯元素和/或金属间粉末从不同底物合成三组材料。 SHS制备的粉末和致密HP材料具有X射线衍射,并发现含有大于80%的Ti3AlC2最大相位,其具有相对于HP压力轴的微晶的晶体凝视方向的各向异性分布。这伴随着微晶的不同平均尺寸。电阻率的测量温度依赖性与文献中报道的那些相一致,但显示出较高的R(300k)/ R(4k)比例为3.5。它们还表现出略微不同的热系数值和所研究的材料之间的剩余电阻率值。 4 k和300 k的磁阻研究了高达35只Koe施加的场,揭示了二次场的依赖性。电子载体密度的相应值在4 k下比在300k处具有30%,并且在研究的材料之间存在不同。结果是关于局部计算的局部密度,并与其他材料的电阻率和磁阻数据相比,如铜和铝。

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