Synthesis of NiMn2O4 thin films via a simple solid-state reaction route

摘要

Herein, NiMn2O4 (MNO) spinel oxide thermistor films were synthesized on a SiO2/Si substrate via annealing the electron beam evaporated Mn-Ni-Mn metal trilayers in air at different temperatures. The X-ray diffraction (XRD) results indicate that polycrystalline spinel-structured MNO thermistor films were formed. The surface particle size of the series MNO films quickly reduced from similar to 300 to similar to 120 nm with a temperature increase from 650 to 750 degrees C, and then, slowly reduced to 80 nm or even smaller with a temperature increase from 750 to 950 degrees C. Specifically, 750 degrees C anneal formed the spinel MNO film with largest B value of 5067 and Ea value of 0.4366. The proposed synthesis route for MNO spinel oxide film has been proven to be feasible.