首页> 外文期刊>CERAMICS INTERNATIONAL >The degradation behavior of high-voltage SnO2 based varistors sintered at different temperatures
【24h】

The degradation behavior of high-voltage SnO2 based varistors sintered at different temperatures

机译:不同温度烧结高压SnO2压敏电阻的劣化行为

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In this research, for the first time, the stability of SnO(2)( )based varistor ceramics sintered in the range of 1250-1350 degrees C against DC-accelerated aging and impulse surge current tests, was systematically studied. Microstructural study of the sintered samples by XRD and FESEM indicated that the sintering temperature only affects densification and grain size, while phase composition remains intact. With the increase of sintering temperature from 1250 degrees C to 1350 degrees C, the mean grain size increased from 1.6 to 8 The maximum nonlinear coefficient of 50 and the minimum leakage current density of 1.5 mu A/cm(2) were obtained in the sample sintered at 1300 degrees C. The breakdown electric field decreased from 800 V/mm to 270 V/mm, when sintering temperature increased from 1250 degrees C to 1350 degrees C. The samples sintered at 1250 degrees C did not show stability against neither of DC-accelerated aging and impulse current tests. The varistors sintered at 1300 degrees C exhibited the excellent resistance to DC-accelerated aging degradation, while ceramics sintered at 1350 degrees C showed the best resistance to impulse current degradation.
机译:在本研究中,最初地,系统地研究了在1250-1350℃的范围内烧结的SnO(2)()基于压敏电阻陶瓷的稳定性和脉冲电流测试。 XRD和FeSEM的烧结样品的微观结构研究表明烧结温度仅影响致密化和晶粒尺寸,而相组合物保持完整。随着烧结温度的增加从1250℃至1350℃,平均晶粒尺寸从1.6到8增加到50的最大非线性系数,并在样品中获得1.5μma/ cm(2)的最小漏电流密度在1300℃下烧结。当烧结温度从1250℃升高到1350℃时,击穿电场从800 V / mm降低到270 v / mm。在1250摄氏度下烧结的样品并未显示出与DC都不显示稳定性 - 燃烧老化和脉冲电流测试。在1300摄氏度下烧结的压敏电阻表现出对DC加速的老化降解的优异抗性,而在1350℃下烧结的陶瓷显示出最大的抗冲脉冲劣化。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号