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Enhanced electromagnetic wave absorption properties of a novel SiC nanowires reinforced SiO2/3Al(2)O(3)center dot 2SiO(2)( )porous ceramic

机译:增强新型SiC纳米线的电磁波吸收性能增强SiO2 / 3AL(2)O(3)中心点2sio(2)()多孔陶瓷

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摘要

To realize the broad-bandwidth and high-efficiency absorption characteristics, a novel SiC nanowires reinforced SiO2/3Al(2)O(3)center dot 2SiO(2) porous ceramic was successfully fabricated by method of precursor infiltration pyrolysis (PIP). Polycarbosilane (PCS) and ferrocene (Fe(C5H5)(2)) were used as the precursor and catalyst to incorporate SiC nanowires into the SiO2/3Al(2)O(3)center dot 2SiO(2) porous ceramic. The curvy SiC nanowires formed three-dimensional (3D) networks with a proper nanometer heterostructure, thereby consuming the microwave energies. The influence of SiC nanowires contents on the microwave absorption properties was investigated. The results indicate that the SiC nanowires contents can be tuned by controlling the PIP cycles, thereby modifying the dielectric properties of as-prepared composite ceramics. The dielectric and electromagnetic wave absorption performances are gradually enhanced with an increasing of SiC nanowires contents. The SiC nanowires reinforced SiO2/3Al(2)O(3)center dot 2SiO(2) composite ceramic exhibits excellent electromagnetic wave absorption abilities when the SiC nanowires content is 23.9% (PIPS). The minimum reflection coefficient (RCmin) of the composite ceramic is - 30 dB at 10.0 GHz, corresponding to more than 99.9% of the electromagnetic wave consumption. The effective absorption bandwidth (EAB) can cover the frequency ranges of 8.2-12.4 GHz (the entire X-band) at the thickness of 5.0 mm. In general, the novel SiC nanowires reinforced SiO2/3Al(2)O(3)center dot 2SiO(2) composite ceramic can be considered as a promising electromagnetic wave absorbing material.
机译:为了实现宽带宽和高效吸收特性,通过前体浸润热解(PIP)的方法成功制造了一种新型SiC纳米线增强SiO2 / 3AL(2)O(3)中心点2SiO(2)多孔陶瓷。聚氨基硅烷(PCS)和二茂铁(Fe(C5H5)(2))用作前体和催化剂,以将SiC纳米线掺入SiO 2 / 3Al(2)O(3)中心点2SiO(2)多孔陶瓷中。弯曲的SiC纳米线用适当的纳米异质结构形成三维(3D)网络,从而消耗微波能量。研究了SiC纳米线含量对微波吸收性能的影响。结果表明,通过控制PIP循环可以调节SiC纳米线内容物,从而改变制备的复合陶瓷的介电性能。随着SiC纳米线含量的增加,介电和电磁波吸收性能逐渐增强。 SiC纳米线增强SiO2 / 3AL(2)O(3)中心点2sio(2)复合陶瓷在SiC纳米线含量为23.9%(PIPS)时表现出优异的电磁波吸收能力。复合陶瓷的最小反射系数(Rcmin)为-30dB,10.0GHz,对应于电磁波消耗的99.9%以上。有效吸收带宽(EAB)可以覆盖8.2-12.4GHz(整个X波段)的频率范围,厚度为5.0mm。通常,新颖的SiC纳米线增强SiO 2 / 3AL(2)O(3)中心点2sio(2)复合陶瓷可被认为是有希望的电磁波吸收材料。

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