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Multiscale defect responses in understanding degradation in zinc oxide varistor ceramics

机译:氧化锌压敏电阻陶瓷中理解下降的多尺度缺陷响应

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摘要

Dielectric responses of multiscale defects, including electron trapping behaviours of intrinsic point defects in grains, heterogeneous interface of depletion/intergranular layers, and dynamic responses of interface states at grain boundaries, were investigated in ZnO varistor ceramics via the DC ageing process. The dielectric relaxation peaks corresponding to zinc interstitials and oxygen vacancies increased, revealing that the donor densities gradually increase with ageing time. Dynamic response of the interface states, which were observed to undergo significant dc conductance, using traditional dielectric spectroscopy, is unveiled based on an optimised (partial derivative epsilon'/partial derivative ln epsilon omega)/epsilon' spectroscopy. The energy level of interface states monotonously decreased while the relaxation peak value increased, corresponding to decreased interface states with degradation time. Collectively, the degradation of Schottky barrier during DC ageing process is discussed based on multiscale defect responses with the help of the (partial derivative epsilon'/partial derivative ln epsilon omega)/epsilon' spectroscopy.
机译:通过DC老化方法在ZnO变阻器陶瓷中研究了多尺度缺陷的多尺度缺陷的介质响应,包括谷物中的固有点缺陷的特性点缺陷,缺陷/晶状体层的界面状态的动力响应,并通过DC老化方法在ZnO变阻器陶瓷中研究。对应于锌间质性和氧空缺的介电松弛峰增加,揭示了供体密度随着老化时间逐渐增加。界面状态的动态响应,观察到使用传统介电光谱进行显着的直流电导,基于优化的(部分衍生ε/部分衍生物LN epsilon OMEGA)/ epsilon'光谱。接口状态的能量水平在放松峰值增加时单调地减小,对应于具有劣化时间的接口状态下降。统称,基于(部分衍生物Epsilon'/偏衍生物LN Epsilon Omega)/ epsilon的光谱,基于多尺度缺陷响应讨论了在DC老化过程中的肖特基屏障的降解。

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