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Elimination of grain boundaries and its effect on the properties of silicon nitride ceramics

机译:消除晶粒边界及其对氮化硅陶瓷性能的影响

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摘要

To eliminate the excess grain boundary phase in silicon nitride ceramics prepared through hot pressing and a post-sintering heat treatment, carbon was introduced into the sintered ceramics. This was accomplished in two ways: first, a small amount of carbon was used as a sintering additive; however, this creates large pores in the ceramics, resulting in a decrease in the thermal conductivity and mechanical properties of the samples. Alternatively, the C/Si3N4 power bed could be used instead of the BN/Si3N4 power bed, which obviously eliminates the grain boundary phase. Further, the C/Si3N4 power bed possess excellent mechanical properties while increasing the thermal conductivity of the samples. Therefore, the silicon nitride ceramics with 123 W m(-1) K-1 thermal conductivity and 986 MPa bending strength of can be obtained using the C/Si3N4 powder bed during the post-sintering heat treatment.
机译:为了消除通过热压制备的氮化硅陶瓷中的过量晶界相和烧结后热处理,将碳引入烧结陶瓷中。 这是以两种方式完成的:首先,使用少量碳作为烧结添加剂; 然而,这在陶瓷中产生了大的孔,导致样品的导热性和机械性能下降。 或者,可以使用C / Si3N4功率床代替BN / Si3N4功率床,这显然消除了晶界相位。 此外,C / Si3N4功率床具有优异的机械性能,同时增加样品的导热率。 因此,在后烧结后热处理期间,可以使用C / Si3N4粉末床获得123WM(-1)k-1导热率和986MPa弯曲强度的氮化硅陶瓷。

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